首页> 外文OA文献 >Electronic properties in a quantum well structure of Weyl semimetal
【2h】

Electronic properties in a quantum well structure of Weyl semimetal

机译:Weyl半金属量子阱结构的电子特性

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

We investigate the confined states and transport of three-dimensional Weylelectrons around a one-dimensional external rectangular electrostaticpotential. Confined states with finite transverse wave vector exist at energieshigher than the half well depth or lower than the half barrier height. Therectangular potential appears completely transparent to normal incidentelectrons but not otherwise. The tunneling transmission coefficient issensitive to their incident angle and shows resonant peaks when their energycoincides with the confined spectra. In addition, for electrons in theconduction (valence) band through a potential barrier (well), the transmissionspectrum has a gap of width increasing with the incident angle. Interestingly,the electron linear zero-temperature conductance over the potential canapproach zero when the Fermi energy is aligned to the top and bottom energiesof the potential, when only electron beams normal to the potential interfacescan pass through. The considered structure can be used to collimate Weylelectron beams.
机译:我们研究一维外部矩形静电势周围三维Weyl电子的约束状态和传输。具有有限横向波矢量的受约束状态存在于高于半阱深度或小于半势垒高度的能量处。矩形电势对法向入射电子似乎完全透明,但并非如此。隧道传输系数对它们的入射角敏感,并且当它们的能量与约束光谱一致时会显示出共振峰。另外,对于穿过势垒(阱)的导电(价)带中的电子,透射光谱具有随着入射角而增加的宽度间隙。有趣的是,当费米能量与电势的上下能量对准时,当仅垂直于电势界面的电子束通过时,电势上的电子线性零温度电导可以接近零。所考虑的结构可以用于准直韦勒电子束。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号